IG2型离子源系统典型应用是氩离子溅射清洗表面(中科院物理所配置多套IG2型离子源)溅射清洗 /表面准备，用于表面科学，  MBE ，高真空溅射过程，离子辅助沉积，离子束溅射镀膜，反应离子刻蚀。

IG2 2kV Backfill Ion Source and Control

RBD Instruments’ IG2 Ion Source Package is the ideal solution for sputter cleaning of samples under UHV conditions. The IG2 Ion Source Package consists of the Model 04-165 2 kV Backfill Ion Source and the Model 32-165 Ion Source Control. These units are interchangeable with the PHI® 04-161 and 04-162 ion guns and the PHI® 20-045 control, respectively.

The Model 1401 Ion Gunis ideal for use in surface chemistry experiments such as sample preparation and depth profiling with Auger and XPS. It can be used with most inert gasses.

The Model1407 Ion Gunfeatures Duoplasmatron performance in an electron impact ionization ion gun. By means of changeable apertures in the optics column, a wide range of beam currents and spot sizes may be obtained. At a beam energy of 5 keV, beam current may be adjusted from 2 uA into a 20 um diameter spot to 20 uA into a 100 um diameter spot.

The Model 1402 Ion Gunfeatures high beam currents at very low beam energies. It also may be operated at high beam energies (up to 3 keV) to provide additional depth profiling and sample cleaning capability

3 kV Ion Source Package

RBD is now providing a 3 kV ion source sputter package that comprises an electron discharge source, power supply, and cable. Designed to operate as low as 100 eV, the 3 kV ion source provides a large 10 mm spot size and is compatible with all inert gasses and does not require differential pumping.

The package includes ion source, electronic control unit, sample current meter, cabling, operating manual and a spare filament assembly.

IG2离子源套件包含：

• Model 04-165 2 kV背充式离子源

• Model 32-165离子源控制器

兼容性优势

• 可与PHI® 04-161和04-162型离子源系统互换

• 控制器可与PHI® 20-045控制器互换使用

Model 1401离子源系统

• 应用：表面化学实验，如样品制备和俄歇/XPS深度剖析

• 气体兼容：适用于大多数惰性气体

• 典型用途：氩离子溅射清洗表面

Model 1407离子源系统

• 特点：在电子碰撞电离离子源中实现双等离子体性能

• 可调参数：

通过更换光学柱中的孔径，可获得宽范围的束流和束斑尺寸

在5 keV束能下，束流可从2 μA（20 μm直径斑点）调节至20 μA（100 μm直径斑点）

Model 1402离子源系统

特点：

• 在极低束能下提供高束流

• 可在高束能下操作（3 keV）

• 增强深度剖析和样品清洗能力

优势

• 高性价比：在提供专业性能的同时保持有竞争力的价格

• 优异兼容性：与主流PHI设备完全互换，便于系统升级和维护

• 适用性：覆盖从表面清洗到深度剖析的多种应用场景

• 灵活调节：多种型号满足不同束流、束能和束斑尺寸需求

• 操作简便：完整的套件配置，安装和操作便捷

典型用户反馈

• 中科院物理所等科研单位已成功配置多套IG2型离子源，验证了其在：

• 样品表面清洁处理

• 薄膜沉积前的表面活化

• 深度剖面分析

• 材料表面改性等方面的优异性能

该离子源系统为表面科学、材料研究和薄膜技术领域提供了可靠、高效的离子束处理解决方案。